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    • 专利摘要:
    Physical sensor comprising a substrate (4), a moving mass (8), said mass (8) being able to be moved by an external force, a first optical resonator (16.1), a light waveguide (18.1) measuring device and a detection light waveguide, a rigid plate (10) able to modify the optical resonance frequency of said optical resonator (16.1) by bringing it closer to and away from it, a lever arm (6) articulated in rotation on the substrate (4) by a pivot connection (12) and the mass (8) being integral in movement with the transmission means (6), the rigid plate (10) being arranged relative to the mass (8) and to the pivot connection (12) so that the lever arm (6) transmits to the rigid plate (10) amplified the movement of the mass (8).
    公开号:FR3041761A1
    申请号:FR1559015
    申请日:2015-09-24
    公开日:2017-03-31
    发明作者:Laurent Duraffourg
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    OPTO-MECHANICAL PHYSICAL SENSOR WITH IMPROVED SENSITIVITY
    DESCRIPTION
    TECHNICAL FIELD AND STATE OF THE PRIOR ART
    The present invention relates to a physical sensor in particular opto-mechanical inertial with improved sensitivity compared to opto-mechanical sensors of the state of the art, for example can be implemented in the production of accelerometers, gyrometers, pressure sensors and field sensors such as magnetometers.
    Sensors, including inertial sensors, such as accelerometers are commonly used in consumer portable devices. We then seek to achieve inertial sensors with good resolution, small footprint and reduced costs compared to existing inertial sensors.
    An accelerometer comprises a suspended mass which is set in motion by an external acceleration force, the displacement is measured and makes it possible to determine the acceleration experienced by the accelerometer and the system to which it is attached. The detection of the displacement of the mass is done for example by capacitive means.
    The document Dong, B., Cai, H., Tsai, J.M., Kwong, D.L., & Liu, a. Q. (2013). An on-chip opto-mechanical accelerometer. MEMS2013, 641-644. doi: 10.1109 / MEMSYS.2013.6474323 discloses an opto-mechanical accelerometer which comprises a ring-shaped resonator and a mass suspended near the ring. The mass carries an arc concentric to the ring, disposed at rest at a given distance from the ring. The movement of the mass causes a change in the distance between the ring and the arc, resulting in a modification of the effective refractive index of the ring due to the disturbance of the evanescent waves. This index variation is measured and makes it possible to go back to the acceleration undergone.
    This accelerometer has a sensitivity relatively limited acceleration.
    STATEMENT OF THE INVENTION
    The object of the present invention is to provide a physical sensor, in particular an opto-mechanical inertial sensor, with increased sensitivity.
    The previously stated goal is achieved by a physical sensor comprising a moving mass, at least one optical resonator, means for converting the displacement of the mass or the stress undergone by the mass by modifying the resonance frequency of the optical resonator, said means conversion are such that they amplify the displacement or the stress resulting from the movement of the mass to the optical resonator so as to obtain a modification of the resonance frequency of the optical resonator.
    In other words, the invention uses a lever effect to increase the effect of a displacement of the resulting mass, for example the application of an inertial force or an inertial stress experienced by the mass, on the optical resonator and thus increase its detection sensitivity of the sensor.
    In one embodiment, the amplitude of the displacement of the mass is amplified causing a variation of the resonant frequency (s) of the optical resonator (s) by a remote influence.
    In another embodiment, the constraint causing displacement of the mass is amplified, this constraint applying to the optical resonator (s), causing a variation of the resonance frequency (s) of the optical resonator (s) by reversible mechanical deformation of the optical resonator (s). or optical resonators.
    In another embodiment, in which the resonator (s) is (are) mechanically deformed as in the previous embodiment, it is furthermore provided to mechanically vibrate the resonator (s) and to measure a frequency variation of optical resonance of the resonator (s) due to the reversible mechanical deformation of the optical resonator.
    Very advantageously, the sensor is a micro-opto-mechanical and / or nano-opto-mechanical system, the mass is the beam are advantageously made in a thick layer while the optical resonator is made in a thin layer. The sensitivity of the sensor is further improved, the mass having a greater inertia. For example, the sensor can be implemented in an accelerometer or in a gyrometer.
    Advantageously, the sensor comprises two optical resonators mounted in differential.
    The optical resonator (s) are, for example, optical micro-disks, micro-toroids or photonic crystals.
    The subject of the present invention is therefore a physical sensor comprising from a substrate: a mass that is mobile with respect to the substrate, said mass being able to be set in motion by an external force, at least one first optical resonator, associated a first guide structure for the injection into the first optical resonator of an injected light wave and the collection at the output of the first optical resonator of a collected light wave, a mechanical structure able to modify the optical resonance frequency of said first optical resonator, means for transmitting the displacement of the mass or the external force undergone by the mass to the mechanical structure, said transmission means being articulated in rotation with respect to the substrate by a pivot connection and the mass being mechanically secured to transmission means, the mechanical structure being arranged relative to the mass and the pivot connection of so that the transmission means transmit to this mechanical structure, amplified manner, the displacement of the mass or the external force undergone by the mass.
    In an exemplary embodiment, the guide structure comprises either a waveguide for injecting the injected light wave and a waveguide for collecting the collected light wave, or a single waveguide. arranged to perform both the injection of the injected light wave and the collection of the collected light wave.
    Advantageously, the transmission means comprise a beam hinged in rotation relative to the substrate, the mass being integral with the beam.
    In a first embodiment, the mechanical structure modifies the optical resonance frequency of said first optical resonator without contact with said first optical resonator.
    For example, the mass is secured to the beam on one side of the pivot connection and the mechanical structure is secured to the beam on the other side of the pivot connection.
    The mechanical structure may comprise at least one element in the form of a plate whose edge is adapted to move closer to and away from the first optical resonator.
    In the other embodiment, the mechanical structure is able to mechanically deform the first optical resonator. The mechanical structure is preferably disposed between the pivot connection and the ground and is mechanically connected to the first optical resonator.
    The first optical resonator may be suspended between the substrate and the transmission means. Preferably, the first optical resonator is suspended by rigid beams connected to the substrate.
    The sensor according to the second embodiment may advantageously further comprise means for mechanical vibration of the first optical resonator. The vibrating means are for example optical or electrical means.
    The first resonator is for example Si, AsGa or SiN.
    Advantageously, the mass and the transmission means are thicker than the first optical resonator.
    According to an additional characteristic, the first optical resonator is an optical ring, an optical micro-toroid or an optical micro-disk.
    Alternatively, the first optical resonator is a part of a photonic crystal disposed on the substrate and the mechanical structure comprises another portion of the photonic crystal, which is integral with the transmission means.
    Advantageously, the sensor may comprise a second optical resonator associated with a second guiding structure for injecting into the second optical resonator an injected light wave of frequency identical to that injected into the first resonator, said second guiding structure. allowing the collection of a light wave collected at the output of the second resonator, the light wave injected into the first optical resonator and the wave injected into the second optical resonator being obtained for example from the same divided light source, said first and second optical resonators being arranged to allow differential measurement.
    The present invention also relates to a measuring assembly comprising at least one sensor according to the invention, a source of a light wave that can be injected into at least the first guide structure, at least one light wave detector. collected at the output of the first guide structure, and a processing unit of at least the signal or signals collected by the detector. The processing unit for example processes an amplitude modulation.
    The source of the light wave can inject at a frequency different from the maximum transmission frequency of the first optical resonator in the absence of influence of the mechanical structure on the resonance frequency of the first optical resonator. The processing unit processes, for example, an optical resonance frequency variation of the first optical resonator or optical resonance frequency variations of the first and second optical resonators mounted in differential.
    As a variant, the processing unit processes a mechanical frequency variation of the first optical resonator set in mechanical vibration or variations of the mechanical frequencies of the first and second optical resonators set in mechanical vibration. The assembly may comprise a closed loop, of the phase-locked loop type.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on the basis of the description which follows and the attached drawings in which: FIG. 1A is a top view in schematic representation of an example of a first embodiment of a sensor; particularly inertial, - Figure IB is a top view of a variant of the sensor of Figure IA, - Figures 2A, 2B and 2C are sectional views of the sensor of Figure 1 according to the plans A-A ' , BB 'and CC' respectively, - Figures 3A and 3B are top views of alternative embodiments of the sensor of Figure 1, - Figure 4 is a top view of another example of particular inertial sensor according to the first embodiment using photonic crystals; FIG. 5 is a graphical representation of the transfer function of an optical resonator implemented in a sensor according to the invention, in particular inertial, FIG. 6A is a top view in sketchy representation of an example of a second embodiment of a particular inertial sensor at rest, - Figure 6B is a view of the sensor of Figure 6A in the detection phase, - Figures 7A and 7B are views of FIG. 8A is a top view of an alternative embodiment of the sensor of FIG. 6A; FIG. 8B is a top view of the sensor of FIG. 6A according to planes DD 'and EE' respectively; another variant embodiment of the sensor of FIG. 6A; FIG. 9 is a schematic representation of the sensor of FIG. 6A with the probe lasers and the photodetectors; FIG. 10 is a graphical representation of the transfer function of a optical resonator implemented in a sensor according to a third embodiment particularly inertial, - Figure 11 is a schematic representation of the sensor according to the third embodiment with the probe lasers, photodetectors and a closed loop.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    FIG. 1A is a top view of an exemplary embodiment of a sensor according to a first embodiment, which is an inertial sensor, comprising a substrate 2 and a structure 4 suspended relative to the substrate 2.
    The structure 4 is able to move relative to the substrate substantially in the plane of the sensor about an axis of rotation Z perpendicular to the plane of the XY sensor which is the plane of the sheet in the representation of FIG IA.
    The structure 4 comprises a beam 6 of longitudinal axis Y, a mass 8 located at a first longitudinal end 6.1 of the beam 6 and an influencing element 10 situated at a second longitudinal end 6.2 of the beam. 6. The influence element 10 is in the example shown formed by a rigid plate. The beam assembly 6, mass 8 and influence element 10 forms a rigid assembly. The structure is articulated in rotation about the Z axis relative to the substrate by means of a pivot connection 12.
    In the following description, the beam 6 will be designated "lever arm" to avoid confusion with the beams forming the suspension arm or pivot connection.
    The pivot connection 12 comprises, in the example shown, two beams 12.1 extending on either side of the lever arm 6 perpendicular to it, towards the substrate, each beam 12.1 being anchored to the substrate by a stud anchor. The two beams 12.1 are deformable in flexion.
    The sensor also comprises at least one optical resonator, in the example shown two optical resonators on the substrate. The optical resonator (s) 16.1, 16.2 are fixed with respect to the substrate and are arranged relative to the influencing element so that a gap of variable width is delimited between the influence element and the optical resonator (s). 16,1,16.2.
    In the example shown, the influence element extends along the X axis perpendicular to the lever arm and is arranged between the two optical resonators. The influence element 10 comprises two end faces 10.1, each opposite an optical resonator 16.1, 16.2, delimiting therewith an air gap el, e2 respectively. The two air gaps vary in opposite direction allowing a differential measurement.
    Advantageously, at rest, i.e. when the mass is stationary relative to the substrate, the values of air gaps el and e2 are equal.
    In the example shown, the two optical resonators are similar, only the optical resonator 16.1 will be described in detail.
    The resonator 16.1 has a ring. In addition, a coupling waveguide 18.1 allows injecting an incident light beam, for example continuous, into the resonator and a coupling waveguide 20.1 makes it possible to collect the transmitted or reflected light beam.
    The waveguides are arranged on either side of the ring in the Y direction.
    The incident beam is for example emitted by a laser.
    The transmitted or reflected beam is collected for example by a photodetector.
    The beam can be emitted by an external laser whose light is coupled by a coupling network or by an injection by the wafer. The laser can also be attached above the injection waveguide and the light couples directly into this guide in evanescent coupling. The detector is placed above a second network that diffuses light onto the detector. In an alternative mode, the detector is directly placed at the end of the output waveguide. The beam transmitted or reflected by the optical resonator will be designated hereinafter "detection beam".
    The pivot connection 12 is located along the lever arm 6 so that a lever effect appears and the movement of the influence element is amplified relative to that of the mass. For this purpose, the pivot connection 12 is situated at a shorter distance from the mass than from the influence element 10. The distance between the pivot connection and the edge of the mass along the direction X is denoted by I and distance between the central zone of the influence element and the pivot link is denoted L, L being greater than I. Preferably, L is chosen very large compared to I to optimize the leverage effect while taking into account the constraints embodiment and size. L is typically between 1 pm and several tens of microns and I is typically between a hundred nanometers and a few microns.
    In FIGS. 2A to 2C, the sensor of FIG. 1A can be seen according to various sectional planes.
    The mobile structure is suspended on the substrate 4 via a layer 22, said sacrificial layer for example oxide, which is partially etched to release the mobile structure.
    The structure is made in a stack comprising a thin layer 23, called the NEMS layer, an interlayer 24 and a thick layer 26, called the MEMS layer.
    For example, the MEMS layer comprises silicon, poly-silicon or amorphous silicon and has for example a thickness of between 100 nm and 500 nm, and the NEMS layer comprises, for example, silicon, SiGe or Ge and has, for example, for example a thickness of between 10 μm and 100 μm.
    The material of the layer (s) is chosen according to the mechanical properties and the desired optical wavelength range.
    Preferably and as shown in FIG. 2C, the mass and the lever arm are made in a thick layer, called the MEMS layer, and the influence element and / or the suspension means, and / or the guides and / or optical resonators can be made in a thin layer, called NEMS layer. This embodiment makes it possible to produce a mass having greater inertia, which further improves the sensitivity of the sensor.
    In a variant, the optical elements such as the resonator (s) and the suspension means may be made in different layers.
    Alternatively, the optical resonator (s) comprise optical microdisks or micro-toroids.
    Preferably, in an embodiment of a differential measuring sensor, the two optical resonators are of similar structures.
    In FIG. 1B, we can see an alternative embodiment of the sensor of FIG. 1A in which, for each resonator 16.1, 16.2, only one coupling waveguide 18.1 ', 18.2' respectively injects the incident light beam into the resonator. and collect the transmitted or reflected beam.
    Several resonators could be provided on one side or side of the influence element.
    The operation of the sensor of Fig. 1A will now be described.
    FIG. 5 shows the representation of the amplitude transfer function designated Tr of an optical resonator implemented in a sensor according to the invention. LS is the operating frequency of the probe laser injected into the resonator.
    The displacement of the mass δχ as a function of time and the amplitude modulation T of the optical detection signal as a function of time are also schematized. The transfer function could alternatively be a phase transfer function.
    Preferably, the frequency of the injected beam is shifted with respect to the wavelength giving the maximum transmission in order to inject at a frequency in a zone of great slope. Thus a small variation in the resonance frequency of the optical resonator, the resonant frequency corresponding to the maximum of the transfer function, causes a large variation in amplitude. Typically, the offset of the normalized optical resonance frequency at the optical frequency at rest is of the order of a few ppm (parts per million), which corresponds to a modulation of a few tens of ppm.
    At rest, the influence element is at a given distance el, e2 of each of the rings 16.1, 16.2 respectively, the value of the effective optical index 11, i 2 of each of the rings 16.1, 16.2 at rest depends on the values from el and e2. These indices il, i2 set the resonance frequencies at rest of the rings 16.1, 16.2 respectively
    Only the detection by the resonator 16.1 will be described, the detection being similar on the resonator 16.2.
    The laser injects a probe beam continuously in the waveguide 18.1, it circulates in the ring. A detection beam is collected by the detection waveguide 20.1.
    Under the effect of an external inertial force, for example an acceleration, the mass moves around the axis Z. The influence element 10 also pivots around Z. Due to the lever arm effect, any movement δχ of the mass 8 causes a displacement of the influencing element with an amplitude amplified by a factor L / l. The value of the air gap el varies with the displacement of the element of influence, this modification of the air gap causes a modification of the effective optical index of the ring 16.1. This optical index variation causes a modification of the optical resonance frequency of the ring 16.1, which modifies the transfer function of the resonator 16.1. This modification of the transfer function is detected by a modulation of the amplitude of the detection beam. From the measurements of the amplitude modulation, it is possible to go back to the characteristics of the inertial force. Changing the optical resonance frequency of the ring also changes the frequency of the detection signal. Alternatively, by measuring this frequency, it is possible to go back to the characteristics of the inertial force.
    Detection on the 16.2 resonator is similar to that on the 16.1 resonator. On the other hand, when el increases, e2 decreases. By combining the measurements on the detection beams leaving the waveguides, a differential measurement is made.
    It will be understood that the sensor may comprise only an optical resonator.
    In FIG. 1A, the pivot connection between the structure and the substrate comprises two bending-deformable beams. In Figure 3A, we can see an alternative embodiment, wherein the pivot connection comprises two pairs of beams 28, 30, each pair being disposed on either side of the lever arm. The beams 28, 30 of each pair are anchored at one end to the substrate and anchored at another end to the lever arm at the same point. The other pair is mounted symmetrically on the substrate and on the lever arm, the anchor point of the four beams on the lever arm defining the axis of the pivot connection. The beams are deformable in flexion.
    In Figure 3B, we can see another embodiment of the pivot connection 12 '' having four beams 32 arranged cross suspended between the lever arm and a ring 34 integral with the substrate.
    In another variant, the pivot connection could comprise a fixed Z-axis pin anchored at one end to the substrate and at another end to the lever arm and torsionally deformable.
    FIG. 4 shows another embodiment of a sensor according to the first embodiment, which in this example is an inertial sensor, in which the optical resonators each comprise a photonic crystal 36.
    Each photonic crystal 36 has a first portion 36.1 carried by the substrate and a second portion 36.2 carried by the movable structure opposite the first portion 36.1 and arranged so that the distance between the first 36.1 and second 36.2 photonic crystal portion varies with the displacement of the mass. A light beam circulates between the first 36.1 and second 36.2 parts of the crystal, the variation of the distance between the two parts 36.1, 36.2 of the crystal modifies the natural frequency of the resonator, which can then be measured by measuring the frequency of the transmitted light beam. The system operates here in transmission with a waveguide 37 coupling to the photonic crystal.
    The value of the resolution limit or LOD for Limit of Detection in English terminology will be given for a sensor of FIG.
    The sensor comprises: - a proof mass having a length of 100 μm, a width of 50 μm and a thickness of 10 μm, - a lever effect of L / l = 5, - a fineness F = ISL / ÔX of 10 for a silicon ring-shaped optical resonator of effective index neff = 2.4, and radius R = 50 pm, ie a free spectral range or ISL of the order of 3.2 nm.
    The calculation of the resolution limit takes into account the noise of the laser, the noise of the electronics and the noise of the photodiode which collects the transmitted or reflected beam.
    The average power injected is of the order of 1 pW and the noise of the laser is of the order of 6x1011 W / VHz (this corresponds to a relative noise of -145dB / Hz for an average power output of OdBm). The noise of the photodiode characterized by its NEP (Noise Equivalent Power in English terminology) is lpW / VHz for a GR gain of 5x104 and the typical noise of an electronics is 10nV / VHz.
    Under these conditions the resolution limit at 3o is 0.5 ng for 100 ms of integration time. By way of comparison, the measurements or calculations given in the literature mention resolution limits limited to a few pg. The lowest limit reached is 5ng for 1s of integration time on larger components in capacitive reading. The invention thus makes it possible to gain an order of magnitude over the resolution limit by being 10 times faster over the duration of the measurement.
    FIGS. 6A and 6B are top views of an exemplary embodiment of a second embodiment of a sensor according to the invention. This differs from the sensor according to the first embodiment in that the optical resonators are mechanically deformed.
    The sensor of FIGS. 6A and 6B comprising a substrate 102 and a structure 104 suspended relative to the substrate 102.
    The structure 104 is able to move relative to the substrate substantially in the plane of the sensor about an axis of rotation Z perpendicular to the plane of the XY sensor which is the plane of the sheet in the representation of Figure 6A.
    The structure 104 comprises a beam 106 of longitudinal axis Y mechanically embedded by a first end 106.1 on the substrate. The structure 104 also comprises a mass 108 situated at a second longitudinal end 106.2 of the beam 106.
    The structure is pivotable in the plane about the Z axis by the pivot connection formed between the beam 106 and the recess, the beam 106 being deformed in bending.
    The sensor also comprises at least one optical resonator, in the example shown two optical resonators on the substrate. The optical resonator (s) 116.1, 116.2 are arranged on either side of the Y axis of the beam 106.
    Each resonator is suspended between the substrate and the beam 106. In the example shown, the resonators comprise a ring.
    Each ring is suspended from the substrate 102 by a beam 117.1 embedded on the substrate and the lever arm by a beam 117.2. The beams 117.1 and 117.2 are intended to transmit a stress to the resonators.
    The beams 117.1, 117.2 are sufficiently rigid mechanically to avoid bending or buckling and transmit the stress to the optical resonators. In addition, the optical resonators have a significant mechanical rigidity in the axis of the beams. The sensors of FIGS. 8A and 8B, which will be described later, offer optical structures having "reinforced" rigidity.
    A probe 118.1 waveguide for beam routing the incident light, e.g. continuous, into the ring is provided for each ring. It extends along the ring and is cantilevered on the substrate. A detection waveguide 120.1 for the detection light beam is also provided for each cantilever resonator on the substrate. The waveguides extend on either side of the ring parallel to each other. he is also
    The distance between the recess of the lever arm and the center of mass gravity is designated Γ, and the distance between the recess and the point of application of the stress on the resonators, ie the point of connection between the arm lever and the beams 117.2 connected to the resonators is designated L '.
    Preferably it is chosen very large relative to L 'to increase the amplification of the stress experienced by the mass and applied to the resonators. The is typically between 1 pm and several tens of microns and 1 'is typically between a hundred nanometers and a few microns.
    The optical resonator (s) may comprise, as a variant, one or more optical micro-disks and one or more optical micro-toroids.
    The incident beam is for example emitted by a laser. The transmitted or reflected beam is collected for example by a photodetector.
    In Figs. 7A and 7B, sectional views of the sensor of Fig. 6A along plane D-D 'and E-E' respectively can be seen.
    The mobile structure is suspended on the substrate via a layer 122, said sacrificial layer for example oxide, which is partially etched to release the mobile structure.
    The structure is made in a stack comprising a thin layer 122, called the NEMS layer, an interlayer 124 and a thick layer 126, called the MEMS layer.
    For example, the MEMS layer comprises silicon, poly-silicon or amorphous silicon and has for example a thickness of between 100 nm and 500 nm and the NEMS layer comprises for example silicon, SiGe or Ge and for example a thickness of between 10 μm and 100 μm.
    The material of the layer (s) is chosen according to the mechanical properties and the desired optical wavelength range.
    Preferably and as shown in FIG. 7A, the mass and / or the lever arm are made in a thick layer, called the MEMS layer, and the or optical resonators and / or the beams 117.1, 117.1 can be made in a layer. thin, called NEMS layer. This embodiment makes it possible to produce a mass having greater inertia, which further improves the sensitivity of the sensor.
    Elements made solely in the NEMS layer are for example defined by lithography and etching.
    In Figure 8A, we can see an advantageous embodiment of the sensor of Figure 6A, wherein additional retaining means 121 optical resonators are provided. In the example shown, these additional holding means comprise four arms arranged in a cross whose ends are connected to the inner periphery of the ring and the center of the cross is connected to the substrate for example by means of a counter parallel to the Z axis.
    These holding means make it possible to obtain a more rigid system offering better transmission of the stress.
    In FIG. 8B, another more advantageous embodiment of the sensor of FIG. 6A can be seen, in which the optical resonators 116.1, 116.2 comprise resonant discs. Indeed, the discs offer increased stiffness compared to the rings of Figure 8A and therefore a better transmission of the constraint.
    The operation of the sensor will now be described in connection with Figure 9 which schematizes lasers and photodetectors.
    An incident beam injected into the resonator 116.1 is emitted by the laser, preferably its frequency is offset from that giving the maximum peak of transmission or reflection. A detection beam is collected for example by PHD photodetectors. The photodetectors transmit the signals to a processing and computing unit UT to process the signals from both resonators and determine the force.
    When an external inertial force appears, for example an inertial force, such as an acceleration, the mass moves around the axis Z. The beams 117.1 and 117.2 exert a stress on the optical resonators, one of the resonators is compressed while the other is stretched. The applied stress is amplified with respect to the inertial constraint of a ratio L '/ l' because of the lever arm effect. In the case of optical rings, by deforming, they become in first approximation ellipses.
    The stress induces a deformation of the optical resonator causing both a variation of the length of the resonant cavity and a variation of the effective index seen by the photons of the cavity. FIG. 6B shows diagrammatically optical rings deformed under the effect of amplified inertial stress. Indeed this index varies by electrostrictive effect. This electrostrictive effect is superimposed on the geometrical deformation. Consequently, the inertial stress applied to the resonators, by deforming the resonators, modifies the length of the cavity and its effective optical index.
    The sensor according to the second embodiment then offers a greater sensitivity.
    As for the first embodiment, the modification of the optical index of the resonator causes a variation of the frequency or an amplitude variation of the detection beam. From these measurements, it is possible to determine the characteristics of the force applied to the mass.
    In the example shown, a differential measurement is performed, two probe lasers and two photodetectors, one for each resonator, are then implemented. As for the first embodiment, the sensor may have only one resonator.
    Under the same conditions as those applied to the sensor of FIG. 1A, and considering the variation of the perimeter of the optical resonators and by not considering the electrostrictive effect, the limit of resolution at 3o is 1 ng for 100 ms of time. 'integration.
    When taking into account the electrostrictive effect, the response can be improved by a factor of 2, so the resolution can be 0.5 ng. The influence of the electrostrictive effect depends, for example, on the materials used to produce the optical resonators, for example AsGa makes it possible to increase the influence of the electrostrictive effect. Other materials may be used such as INS or Si.
    A sensor according to a third embodiment with frequency detection will now be described.
    The sensor has a structure similar to the sensor of FIG. 6A, the same references will then be taken up, and it further comprises means for vibrating the resonator or resonators so that it (s) form (s) one or more resonators. mechanical. Advantageously, the means optically actuate the resonator (s). The means comprise, for each resonator, for example an amplitude modulated excitation light source at a mechanical resonance frequency of the resonator, this frequency is different from the frequency of the probe beam.
    The excitation light source is for example a laser source designated pump laser. The mechanical resonance frequencies can vary from 10 MHz to 1 GHz depending on the materials and dimensions. They correspond to a natural frequency of the cavity of the resonator. The light source has sufficient optical power to generate the movement by radiation pressure of the photons. The power is for example between 100 nW and 100 pW. the mechanical vibration will be all the stronger as the optical quality factor will be high.
    Alternatively, the vibration of the resonator or resonators can be obtained by other means, for example by capacitive type electrical means.
    In FIG. 10, the transfer function TR 'of the sensor can be represented. The vibration Vfm at the mechanical frequency fm in Hz of the resonator and the vibration Vfm + 5f at the mechanical frequency fm + 6f in Hz of the resonator are represented when a mechanical stress due to an external force is applied to the resonator. The variations of the detection light intensity Tfm and Tfm + 6f are schematically shown for the two mechanical frequencies.
    The operation of the frequency detection sensor will now be described.
    The probe laser injects a probe beam into the resonator. A photodetector collects the detection beam.
    The pump laser injects a light beam at a mechanical resonant frequency of the opto-mechanical resonator. The optical resonator vibrates according to a mode of deformation, of the acoustic arch-mode type or Whispering-gallery-mode (WGM) in Anglo-Saxon terminology, extensional mode for example, which induces, at time scales much shorter than the acceleration signal itself, a variation in the length of the optical cavity, modulating the optical natural frequency of the opto-mechanical resonator as a function of the mechanical vibration induced by the optical actuation.
    As for the operation of the second embodiment, this deformation of the resonator causes a modulation of the amplitude of the intensity transmitted or reflected by the resonator (at the mechanical resonance frequency of the opto-mechanical resonator), in the absence of an external force.
    For example, when an inertial force is applied to the sensor, the mass is set in motion, a constraint then applies to the resonator, which modifies the mechanical resonance frequency, modifying the optical resonance frequency. This results in a modulation of the transmitted intensity due to the external inertial force, which is added to that due to the excitation of the resonator.
    Preferably, the mechanical frequency variation of the opto-mechanical resonator is measured between the empty mechanical frequency (without stress) and the mechanical frequency of the resonator modified by the appearance of an external force. It is then possible to go back to the external force. The displacement of the proof mass also induces a variation of the amplitude of the signal as shown in FIG. 10 as the operating point on the transfer function moves. In doing so, the amplitude of the optical signal varies. This detection method is an alternative to frequency detection, but it has a less favorable signal-to-noise ratio.
    Advantageously, the monitoring of the mechanical resonance frequency, which is the modulation frequency of the optical detection signal, can be done through a closed loop PLL for example by including a differential heterodyne reading (differential lock-in: differential LIA). ) shown schematically in Figure 11 with a loop through a corrector to form a Phase Locked Loop (PLL). The heterodyne reading consists in using the modulation signal of the pump laser as the synchronization signal of the LIA. This method also makes it possible to perform a low-frequency detection of a signal initially at high frequency, which is the mechanical resonance frequency of the opto-mechanical resonator.
    The data processing makes it possible to follow the phase of the mechanical oscillation and to control the amplitude modulation signal of the pump laser (please confirm), for example through an electro-optical modulator, or by directly modulating the laser).
    For example, the sensor makes it possible to produce accelerometers, multi-axis gyrometers by combining, for example, several inertial sensors, one for each axis, pressure sensors and field sensors, such as multi-axis magnetometers.
    An exemplary embodiment of a magnetometer will now be described. The sensor can take for example the structure of FIG IA. The magnetometer has a magnetic layer deposited on the test mass. The magnetic layer comprises for example alternating ferromagnetic and / antiferromagnetic layers formed on the test mass.
    When the sensor is subjected to a magnetic field, the proof mass carrying layer 10 tends to align with the external magnetic field. The displacement of the mass is amplified. The gap between the mass and the resonator (s) varies. The detection is done by detecting this gap variation as described with reference to FIG.
    Alternatively, a magnetometer according to the present invention can implement the stress variation.
    It will be understood that a magnetometer according to the invention can implement two optical resonators.
    In general, a mass is used for each axis. For the detection along the axis orthogonal to the plane of the sensor, the mass has an out-of-plane displacement, the optical resonator is then located in a plane parallel to ground.
    An exemplary embodiment of a pressure sensor will now be described.
    It comprises a membrane, a transmission beam articulated in rotation along an axis contained in the plane of the sensor, a first longitudinal end of which is intended to be displaced by the membrane, and an element of influence secured to a second longitudinal end of the beam, opposite the first end relative to the axis of rotation. The sensor also comprises at least one optical resonator in a plane parallel to the plane of the sensor.
    When pressure is applied to the membrane, the deformation of the membrane is applied to the beam which ampli fi edly moves the influencing element toward or away from the optical resonator. The variation of influence on the optical resonator is detected as for the sensor of FIG.
    The pressure sensor could be made according to the second embodiment, in this case the optical resonator would be located between the axis of rotation and the membrane.
    It will be understood that a pressure sensor according to the invention can implement two optical resonators.
    As explained above, sensors employing an off-plane lever arm are not outside the scope of the present invention.
    The sensor according to the invention can be produced by known methods of microelectronics, for example from a Silicon on Insulator (SOI) substrate, by applying in particular steps of lithography, etching, growth by epitaxy.
    权利要求:
    Claims (23)
    [1" id="c-fr-0001]
    1. Physical sensor comprising from a substrate (4,104): - a mobile mass (8, 108) relative to the substrate (4, 104), said mass (8,108) being able to be set in motion by an external force at least a first optical resonator (16.1, 116.1) associated with a first guide structure for the injection (18.1, 118.1) in the first optical resonator of an injected light wave and the collection (18.2, 118.2) in output of the first optical resonator of a collected light wave, -a mechanical structure (10, 117.1) adapted to modify the optical resonance frequency of said first optical resonator (16.1, 116.1), - transmission means (6, 106) of the displacement of the mass (8, 108) or of the external force undergone by the mass (8, 108) to the mechanical structure (10, 117.1), said transmission means (6, 106) being articulated in rotation with respect to the substrate (4, 108); , 104) by a pivot connection (12) and the mass (8, 108) being integral nically transmission means (6,106), the mechanical structure (10,117.1) being arranged relative to the mass (8,108) and to the pivot connection so that the transmission means (6,106) transmit to this mechanical structure, amplified manner, the displacement of the mass (8,108) or the external force undergone by the mass (8,108).
    [2" id="c-fr-0002]
    2. The sensor according to claim 1, wherein the guiding structure comprises either a waveguide for the injection (18.1, 118.1) of the injected light wave and a waveguide for the collection (18.2, 118.2). the collected light wave, or a single waveguide arranged to perform both the injection of the injected light wave and the collection of the collected light wave.
    [3" id="c-fr-0003]
    3. The sensor of claim 1 or 2, wherein the transmission means (6, 106) comprise a beam hinged in rotation relative to the substrate, the mass (8,108) being integral with the beam.
    [4" id="c-fr-0004]
    The sensor of claim 1, 2 or 3, wherein the mechanical structure (10) modifies the optical resonance frequency of said first optical resonator without contact with said first optical resonator.
    [5" id="c-fr-0005]
    5. Sensor according to claims 3 and 4, wherein the mass (8) is secured to the beam (6) on one side of the pivot connection (12) and the mechanical structure (10) is secured to the beam (6). ) on the other side of the pivot connection (12).
    [6" id="c-fr-0006]
    6. Sensor according to claim 4 or 5, wherein the mechanical structure (10) comprises at least one plate-shaped element whose edge is adapted to move towards and away from the first optical resonator (16.1).
    [7" id="c-fr-0007]
    7. The sensor of claim 1, 2 or 3, wherein the mechanical structure (117.1) is able to mechanically deform the first optical resonator (116.1).
    [8" id="c-fr-0008]
    8. The sensor of claim 6 or 7 wherein the mechanical structure (117.1) is disposed between the pivot connection and the mass (108) and is mechanically connected to the first optical resonator (116.1).
    [9" id="c-fr-0009]
    The sensor of claim 7 or 8, wherein the first optical resonator (116.1) is suspended between the substrate (104) and the transmission means (106).
    [10" id="c-fr-0010]
    10. The sensor of claim 9, wherein the first optical resonator (116.1) is suspended by rigid beams connected to the substrate.
    [11" id="c-fr-0011]
    11. Sensor according to one of claims 7 to 10, further comprising means for mechanical vibration of the first optical resonator.
    [12" id="c-fr-0012]
    12. The sensor of claim 11, wherein the vibrating means are optical or electrical means.
    [13" id="c-fr-0013]
    13. Sensor according to one of claims 7 to 12, wherein the first resonator is Si, AsGa or SiN.
    [14" id="c-fr-0014]
    14. The sensor according to one of claims 1 to 13, wherein the mass and the transmission means (6, 106) are thicker than the first optical resonator (116.1).
    [0015]
    Sensor according to one of Claims 1 to 14, in which the first optical resonator (116.1) is an optical ring, an optical micro-toroid or an optical micro-disk.
    [16" id="c-fr-0016]
    16. Sensor according to one of claims 4, 5 or 6, wherein the first optical resonator (116.1) is a part of a photonic crystal disposed on the substrate and the mechanical structure comprises another part of the photonic crystal, which is secured to the transmission means (6).
    [0017]
    17 Sensor according to one of claims 1 to 16, comprising a second optical resonator (116.2) associated with a second guide structure for the injection (20.1, 120.1) into the second optical resonator (116.2) of an injected light wave of identical frequency to that injected into the first resonator, said second guide structure allowing the collection (20.2, 120.2) of a light wave collected at the output of the second resonator, the light wave injected into the first optical resonator and the wave injected into the second optical resonator being obtained for example from a same divided light source, said first and second optical resonators being arranged to allow a differential measurement.
    [18" id="c-fr-0018]
    18. Measuring assembly comprising a sensor according to one of claims 1 to 17, a source of a light wave capable of being injected into at least the first guide structure, at least one detector of the collected light wave disposed in output of the first guide structure, and a processing unit of at least the signal or signals collected by the detector.
    [19" id="c-fr-0019]
    19. Measuring assembly according to claim 18, wherein the processing unit processes an amplitude modulation.
    [20" id="c-fr-0020]
    20. Measuring assembly according to claim 18 or 19, wherein the source of the injected light wave has a frequency different from the maximum transmission frequency of the first optical resonator in the absence of influence of the mechanical structure on the frequency. of resonance of the first optical resonator.
    [21" id="c-fr-0021]
    Measuring assembly according to claim 18,19 or 20, wherein the processing unit processes an optical resonance frequency variation of the first optical resonator or optical resonance frequency variations of the first and second differential optical resonators. .
    [22" id="c-fr-0022]
    22. Measuring assembly according to claim 18, 19 or 20, in combination with claim 11 or 12, wherein the processing unit processes a mechanical frequency variation of the first optical resonator set in mechanical vibration or mechanical frequency variations. first and second optical resonators set in mechanical vibration.
    [23" id="c-fr-0023]
    23. Measuring assembly according to claim 22, comprising a closed loop of the phase-locked loop type.
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    同族专利:
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    EP3147673B1|2018-09-19|
    EP3147673A1|2017-03-29|
    US10254304B2|2019-04-09|
    FR3041761B1|2019-05-03|
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    法律状态:
    2016-09-28| PLFP| Fee payment|Year of fee payment: 2 |
    2017-03-31| PLSC| Search report ready|Effective date: 20170331 |
    2017-09-29| PLFP| Fee payment|Year of fee payment: 3 |
    2018-09-28| PLFP| Fee payment|Year of fee payment: 4 |
    2020-10-16| ST| Notification of lapse|Effective date: 20200910 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1559015|2015-09-24|
    FR1559015A|FR3041761B1|2015-09-24|2015-09-24|OPTO-MECHANICAL PHYSICAL SENSOR WITH IMPROVED SENSITIVITY|FR1559015A| FR3041761B1|2015-09-24|2015-09-24|OPTO-MECHANICAL PHYSICAL SENSOR WITH IMPROVED SENSITIVITY|
    US15/274,153| US10254304B2|2015-09-24|2016-09-23|Opto-mechanical physical sensor with an improved sensitivity|
    EP16190342.2A| EP3147673B1|2015-09-24|2016-09-23|Optomechanical physical sensor with improved sensitivity|
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